Development of transmon qubits solely from optical lithography on 300 mm wafers
Development of transmon qubits solely from optical lithography on 300 mm wafers
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仅通过 300 mm 晶圆上的光学光刻技术开发 Transmon 量子位
DOI：
10.1088/2058-9565/ab0ca8
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发表时间：
2019
影响因子：
6.7
通讯作者：
K. Osborn
中科院分区：
文献类型：
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作者：
N. Foroozani;C. Hobbs;C. C. Hung;S. Olson;D. Ashworth;E. Holland;M. Malloy;P. Kearney;B. O'Brien;B. Bunday;D. Dipaola;W. Advocate;T. Murray;P. Hansen;S. Novak;S. Bennett;M. Rodgers;B. Baker;B. Sapp;E. Barth;J. Hedrick;R. Goldblatt;S. P. Rao;K. Osborn
量子位信息处理器的占地面积正在增加，但目前依赖于电子束光刻来图案化所需的约瑟夫森结（JJ）。先进的光学光刻是一种替代的图案化方法，我们报告的发展transmon量子比特图案单独与光学光刻。光刻使用193 nm波长曝光和300 mm大硅晶片。量子位和评估JJ的阵列通过过程控制进行图案化，这导致窄的特征分布：对于在超过一半的晶片宽度上实现的220 nm线宽图案，标准偏差为0.78%。室温评估发现，在完成的芯片中JJ电阻的标准偏差为2.8%-3.6%。量子位使用硅衬底上的铝和氮化钛薄膜，而没有大量的硅蚀刻。量子位的T1时间在26-27 μs提取，表明基于材料的量子位缺陷水平较低。这项研究表明，硅上的大晶片光学光刻是足够的高质量transmon量子比特，并显示了一个有前途的路径，以改善多量子比特处理器。
Qubit information processors are increasing in footprint but currently rely on e-beam lithography for patterning the required Josephson junctions (JJs). Advanced optical lithography is an alternative patterning method, and we report on the development of transmon qubits patterned solely with optical lithography. The lithography uses 193 nm wavelength exposure and 300 mm large silicon wafers. Qubits and arrays of evaluation JJs were patterned with process control which resulted in narrow feature distributions: a standard deviation of 0.78% for a 220 nm linewidth pattern realized across over half the width of the wafers. Room temperature evaluation found a 2.8%–3.6% standard deviation in JJ resistance in completed chips. The qubits used aluminum and titanium nitride films on silicon substrates without substantial silicon etching. T1 times of the qubits were extracted at 26–27 μs, indicating a low level of material-based qubit defects. This study shows that large wafer optical lithography on silicon is adequate for high-quality transmon qubits, and shows a promising path for improving many-qubit processors.