Non-invasive monitoring of CMOS power amplifiers operating at RF and mmW Frequencies using an on-chip thermal sensor
Non-invasive monitoring of CMOS power amplifiers operating at RF and mmW Frequencies using an on-chip thermal sensor
复制标题
使用片上热传感器对在 RF 和 mmW 频率下运行的 CMOS 功率放大器进行非侵入式监控
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
J. Altet
中科院分区：
文献类型：
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作者：
J. González;B. Martineau;D. Mateo;J. Altet
本文介绍了一种无创、无接触的PA手术片上观察技术。它使用一个差分温度传感器，将高频工作的有源晶体管耗散的功率引起的温度升高转换为低频信号，该信号与一些相关的PA值成正比，例如输出功率或PAE。该技术通过在两个不同的PA （2 GHz PA和60 GHz PA）中使用相同的热传感器，采用65nm CMOS工艺实现。
In this paper a non-invasive, contact-less technique for the on-chip observation of PA operation is presented. It uses a differential temperature sensor that transduces the temperature increase due to the power dissipated by active transistors operating at high frequencies into a low frequency signal that is proportional to some relevant PA figures of merit, such as output power or PAE. The technique is demonstrated by using the same thermal sensor in two different PAs (a 2 GHz PA and a 60 GHz PA) implemented with a 65nm CMOS process.