Crystallization of sputtered lead zirconate titanate films by rapid thermal processing
Crystallization of sputtered lead zirconate titanate films by rapid thermal processing
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快速热处理溅射锆钛酸铅薄膜的结晶
DOI：
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
M. Sayer
中科院分区：
文献类型：
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作者：
C. V. Kumar;R. Pascual;M. Sayer
采用快速热退火(RTA)技术对反应磁控溅射制备的锆钛酸铅(PZT)薄膜进行了研究。薄膜是在氧气气氛中以直流溅射的方法制备的，衬底温度为200 °C。随后在600 °C下对S进行快速热分析，通过各种中间相将薄膜结晶成钙钛矿型结构。由于RTA方法所固有的沉积后处理时间短，生长的薄膜的初始性质对结晶动力学有重要的影响。对低温溅射法制备钙钛矿型PZT薄膜的反应顺序进行了评价，确定了影响PZT晶化的各种关键因素。生长的薄膜是由多晶正交氧化铅在二氧化钛和氧化锆的无定形基质中组成的。在退火过程中，氧化铅转变为立方Ph。
A rapid thermal annealing (RTA) technique has been employed to process lead zirconate titanate (PZT) films prepared by reactive magnetron sputtering. The films were fabricated by dc sputtering a multielement metal target in an oxygen ambient at a substrate temperature of 200 °C. A subsequent postdeposition RTA at 600 °C for 5 s crystallizes the films into a perovskite‐type structure through various intermediate phases. Due to the short postdeposition processing times inherent in the RTA method, the initial nature of the as‐grown films has a critical influence on the crystallization kinetics. The reaction sequence in the formation of perovskite PZT from the films deposited at low substrate temperatures by the sputtering technique has been evaluated, and various key factors influencing the crystallization of PZT have been identified. As‐grown films are constituted of polycrystalline orthorhombic lead oxide in an amorphous matrix of titania and zirconia. During annealing lead oxide transforms into a cubic ph...