Growth of High Sn Concentration Germanium-Tin Films on Insulators by Microsecond Laser Annealing
Growth of High Sn Concentration Germanium-Tin Films on Insulators by Microsecond Laser Annealing
复制标题
微秒激光退火在绝缘体上生长高锡浓度锗锡薄膜
DOI：
10.1149/10202.0141ecst
复制
发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Fukata Naoki
中科院分区：
文献类型：
--
作者：
Matsumura Ryo;Fukata Naoki
锗锡（GeSn）是一种具有优良光学性能的IV族发光材料。为了在光子器件上应用这些显著的特性，在绝缘衬底上生长具有高取代Sn浓度的GeSn薄膜是必不可少的。本文研究了非晶锗（a-Ge）和a-GeSn（初始Sn浓度为20 at.%）薄膜的连续激光退火在石英衬底上用微秒退火时间。结果表明，退火后GeSn样品的拉曼峰发生了较大的位移，而Ge样品的位移较小。我们推测，这些结果是由于纳入锡原子到生长的薄膜。
Germanium-tin (GeSn) is an attractive group-IV material with great optical properties as light emitting and receiving element. To apply such significant properties on photonic devices, the growth of GeSn films with high substitutional Sn concentration on insulating substrates is essential. In this work, we have investigated continuous wave laser annealing of amorphous germanium (a-Ge) and a-GeSn films (initial Sn concentration: 20 at.%) on quartz substrates with microsecond annealing time. As a result, large shifting of Raman peak was observed for GeSn samples after annealing, while there was little shifting of that for Ge samples. We speculate that these results are due to incorporation of Sn atoms into the grown films.