Comparison of P, As & Sb doped Polycrystalline CdTe Solar Cells
Comparison of P, As & Sb doped Polycrystalline CdTe Solar Cells
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P、As比较
DOI：
10.1109/pvsc40753.2019.8980934
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
M. Gloeckler
中科院分区：
文献类型：
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作者：
S. Grover;Xiaoping Li;D. Lu;R. Mallick;G. Xiong;M. Gloeckler
比较了掺杂磷、砷或锑的无铜多晶 CdTe 太阳能电池的掺杂性、器件性能和缺陷特性。使用气相传输沉积和 CdCl2 热处理对 CdTe 进行原位掺杂。所有三种掺杂剂均实现了 ~1016 cm-3 范围内的均匀载流子浓度。与 CdSeTe 三元合金的兼容性得到了证明，并且所有三种掺杂剂的量子效率相当，表明任何一种掺杂剂都可以作为铜的替代品。这些结果与先前报道的 sx- 和 px- CdTe V 族掺杂的载流子浓度值进行了比较。基于受体能级的最大载流子浓度的理论计算表明锑的电离最少。尽管受主掺杂较高，但补偿会恶化可实现的多数载流子浓度。
Copper-free polycrystalline CdTe solar cells doped with either Phosphorus, Arsenic or Antimony are compared for dopability, device performance and defect properties. In-situ doping of CdTe with group-V elements was carried out using vapor transport deposition followed by CdCl2 heat treatment. Uniform carrier concentration in ~1016 cm-3 range is achieved for all three dopants. Compatibility with CdSeTe ternary alloy is demonstrated and comparable quantum efficiency for all three dopants suggests that either dopant could serve as a replacement for copper. These results are compared with previously reported carrier concentration values for group-V doping of sx- and px- CdTe. Theoretical calculation for maximum carrier concentration based on acceptor energy level suggests least ionization of Antimony. Compensation worsens the achievable majority carrier concentration despite high acceptor doping.