Growth and Characterization of High In-content InGaN grown by MBE using Metal Modulated Epitaxy Technique (MME)
Growth and Characterization of High In-content InGaN grown by MBE using Metal Modulated Epitaxy Technique (MME)
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DOI：
10.1016/j.jcrysgro.2019.03.021
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发表时间：
2019-06
影响因子：
1.8
通讯作者：
Z. Xing;Wenxian Yang;Zhengbing Yuan;Xuefei Li;Yuanyuan Wu;Junhua Long;Shan Jin;Yukun Zhao;Tong Liu;L. Bian;Shulong Lu;Muchang Luo
中科院分区：
文献类型：
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作者：
Z. Xing;Wenxian Yang;Zhengbing Yuan;Xuefei Li;Yuanyuan Wu;Junhua Long;Shan Jin;Yukun Zhao;Tong Liu;L. Bian;Shulong Lu;Muchang Luo
