Formation of dot arrays with a pitch of 20 nm × 20 nm for patterned media using 30 keV EB drawing on thin calixarene resist
Formation of dot arrays with a pitch of 20 nm × 20 nm for patterned media using 30 keV EB drawing on thin calixarene resist
复制标题
使用 30 keV EB 在薄杯芳烃抗蚀剂上绘图，为图案化介质形成节距为 20 nm × 20 nm 的点阵列
DOI：
10.1088/0957-4484/19/02/025301
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发表时间：
2008
期刊：
影响因子：
3.5
通讯作者：
M. Kodera
中科院分区：
文献类型：
--
作者：
Zulfakri bin Mohamad;Masumi Shirai;H. Sone;S. Hosaka;M. Kodera
研究了利用30 keV电子束在负性杯芳烃抗蚀剂上进行微点阵绘制的可能性。为了形成这样的图案，我们研究了抗蚀剂厚度的点的大小和包装的依赖性。我们建议EB画上一个非常薄的薄膜非常高度密集的点阵形成。我们的实验结果证明了形成高度密集的点阵图案的可能性，其间距为20 nm × 20 nm，抗蚀剂厚度约为13 nm，相当于约1.6 Tbits in-2。
We studied the possibility of achieving very fine-pitch dot arrays with a pitch of 20 nm × 20 nm using 30 keV electron beam (EB) drawing on negative calixarene resist. In order to form such patterns, we studied the dependence on resist thickness of the dot size and the packing. We propose EB drawing on an extremely thin film for very highly packed dot-array formation. Our experimental results demonstrate the possibility of forming highly packed dot-array patterns with a pitch of 20 nm × 20 nm and a resist thickness of about 13 nm, which corresponds to about 1.6 Tbits in−2.