InGaP electron spectrometer for high temperature environments.
InGaP electron spectrometer for high temperature environments.
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适用于高温环境的 InGaP 电子能谱仪。
DOI：
10.1038/s41598-019-47531-8
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发表时间：
2019
影响因子：
4.6
通讯作者：
Butera S
中科院分区：
文献类型：
--
作者：
Butera S
在这项工作中，研究了 100°C 至 20°C 温度范围内的 200 μm 直径 InGaP (GaInP) p+-i-n+mesa 光电二极管，以开发耐温电子能谱仪。 InGaP器件的耗尽层厚度为5μm。 InGaP 探测器的性能在黑暗条件下进行了分析，然后在 183 MBq63Ni 放射性同位素 β 粒子源的照明下进行了分析。 InGaP 光电二极管连接到定制的低噪声电荷敏感前置放大器，以实现粒子计数电子能谱仪。使用反向偏压为 5V 的 InGaP 器件在高达 100°C 的温度下收集 Beta 光谱。将 20°C 时累积的光谱与使用蒙特卡罗模拟预测的光谱进行比较；预测光谱与实验光谱之间存在良好的一致性。这项工作对于开发电子能谱仪具有重要意义，电子能谱仪可用于高温或极端辐射环境（例如水星、木星的卫星欧罗巴、近太阳彗星）的行星和空间科学任务以及地面应用。
In this work, a 200 μm diameter InGaP (GaInP) p+-i-n+mesa photodiode was studied across the temperature range 100 °C to 20 °C for the development of a temperature-tolerant electron spectrometer. The depletion layer thickness of the InGaP device was 5 μm. The performance of the InGaP detector was analysed under dark conditions and then under the illumination of a 183 MBq63Ni radioisotope beta particle source. The InGaP photodiode was connected to a custom-made low-noise charge-sensitive preamplifier to realise a particle counting electron spectrometer. Beta spectra were collected at temperatures up to 100 °C with the InGaP device reverse biased at 5 V. The spectrum accumulated at 20 °C was compared with the spectrum predicted using Monte Carlo simulations; good agreement was found between the predicted and experimental spectra. The work is of importance for the development of electron spectrometers that can be used for planetary and space science missions to environments of high temperature or extreme radiation (e.g. Mercury, Jupiter’s moon Europa, near-Sun comets), as well as terrestrial applications.