Solution Processed Amorphous ZnSnO Thin-Film Phototransistors
Solution Processed Amorphous ZnSnO Thin-Film Phototransistors
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DOI：
10.1109/ted.2016.2632742
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发表时间：
2017-01-01
影响因子：
3.1
通讯作者：
Lu, Jianguo
中科院分区：
文献类型：
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作者：
Feng, Lisha;Yu, Genyuan;Lu, Jianguo
采用燃烧溶液法合成非晶 ZnSnO (a-ZnSnO) 薄膜来制造薄型光电晶体管。 a-ZnSnO 光电晶体管对紫外光极其敏感，在不同的栅极电压下具有明显的光电效应。在关闭状态下，UV 灵敏度相当高（光电流与暗电流之比类似于 10(5)），而在开启状态下则相当低（类似于 10(1)）。在开启和关闭状态下关闭紫外灯后，器件行为均可在 2000 秒内完全恢复到原始状态。我们证明，a-ZnSnO 光电晶体管的紫外行为可以通过栅极电压很好地控制。本文有望为实际应用提供非晶氧化物光电晶体管性能的基础知识。
Amorphous ZnSnO (a-ZnSnO) thin films were synthesized by a combustion solution method to fabricate thin-phototransistors. The a-ZnSnO phototransistors are extremely sensitive to UV light, with evident photoelectric effect identified at various gate voltages. The UV sensitivity is rather high (similar to 10(5) for the ratio of photocurrent to dark-current) at the off-state, while it is quite low (similar to 10(1)) at the on-state. The device behaviors can completely recover to the original state within 2000 s after switching off the UV light at both on-and off-states. We demonstrate that the UV behaviors of a-ZnSnO phototransistors can be well controlled by gate voltages. This paper is expected to provide a fundamental knowledge of performances of amorphous oxide phototransistors for practical applications.