Formation of carbon-induced germanium dots
Formation of carbon-induced germanium dots
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DOI：
10.1063/1.120072
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发表时间：
1997-10
影响因子：
4
通讯作者：
O. Schmidt;C. Lange;K. Eberl;O. Kienzle;F. Ernst
中科院分区：
文献类型：
--
作者：
O. Schmidt;C. Lange;K. Eberl;O. Kienzle;F. Ernst
硅衬底上的预沉积的C的非常少量的原因小于2单层Ge的外延生长后形成岛。这些C诱导的Ge点可以小到横向尺寸为10 nm，高度为1 nm。其面密度为1011 cm−2。观察到来自这些小Ge量子点的强烈光致发光信号，对于2.1±0.3个Ge单层达到最大值。在岛形成的初始阶段，润湿层的光学转变是蓝移的应变补偿效应。我们提出了空间间接的辐射复合机制的电子之间的限制在下面的润湿层和空穴限制在Ge岛.一个非常少量的预沉积的C在Si衬底上导致岛形成后，外延生长少于2个单层Ge.这些C诱导的Ge点可以小到横向尺寸为10 nm，高度为1 nm。其面密度为1011 cm−2。观察到来自这些小Ge量子点的强烈光致发光信号，对于2.1±0.3个Ge单层达到最大值。在岛形成的初始阶段，润湿层的光学转变是蓝移的应变补偿效应。我们提出了空间间接的机制之间的辐射复合限制在下面的润湿层和限制在Ge岛的空穴。
A very small amount of pre-deposited C on a Si substrate causes island formation after epitaxial growth of less than 2 monolayers Ge. These C-induced Ge dots can be as small as 10 nm in lateral size and 1 nm in height. Their areal density is 1011 cm−2. Intense photoluminescence signal from these small Ge quantum dots is observed reaching a maximum for 2.1±0.3 monolayers of Ge. In the initial stages of island formation, the optical transition of the wetting layer is blue-shifted by strain compensation effects. We propose spatially indirect mechanisms of radiative recombination between electrons confined in the underlying wetting layer and holes confined in the Ge islands.A very small amount of pre-deposited C on a Si substrate causes island formation after epitaxial growth of less than 2 monolayers Ge. These C-induced Ge dots can be as small as 10 nm in lateral size and 1 nm in height. Their areal density is 1011 cm−2. Intense photoluminescence signal from these small Ge quantum dots is observed reaching a maximum for 2.1±0.3 monolayers of Ge. In the initial stages of island formation, the optical transition of the wetting layer is blue-shifted by strain compensation effects. We propose spatially indirect mechanisms of radiative recombination between electrons confined in the underlying wetting layer and holes confined in the Ge islands.