Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study
Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study
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DOI：
10.1063/1.4993741
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发表时间：
2017-07-10
影响因子：
4
通讯作者：
Templier, Francois
中科院分区：
文献类型：
--
作者：
Olivier, Francois;Daami, Anis;Templier, Francois
GaN基微发光二极管（μ LED）阵列是非常有前途的用于显示应用的器件。在这些阵列中，每个mu LED作为整个图像的单个像素工作。这些mu LED的电光性能是一个重要的研究课题。在这里，我们研究了LED尺寸对辐射和非辐射复合的影响。标准ABC模型已被广泛用于描述GaN基LED的效率。使用这个模型，我们提取A，B，和C系数的各种LED尺寸，显示如何辐射和非辐射复合过程之间的竞争与LED的几何形状的变化。时间分辨的光致发光允许我们确定与辐射复合相关的系数B。通过电流-电压-亮度特性，我们确定了与Shockley-Read-Hall和Auger复合相关的参数A和C。我们发现，系数A是强烈依赖于LED的尺寸，表明侧壁缺陷的LED的性能上的剧烈影响。另一方面，系数C与LED尺寸无关。后一结果表明，效率下降不依赖于LED尺寸。由AIP出版社出版。
GaN-based micro light-emitting diode (mu LED) arrays are very promising devices for display applications. In these arrays, each mu LED works as a single pixel of a whole image. The electro-optical performance of these mu LEDs is an important subject to study. Here, we investigate the influence of LED size on the radiative and non-radiative recombination. The standard ABC model has been widely used to describe the efficiency of GaN based LEDs. Using this model, we extract A, B, and C coefficients for various LED sizes, showing how the competition between radiative and non-radiative recombination processes varies with the LED geometry. Time-resolved photoluminescence allows us to determine coefficient B, related to radiative recombination. Through current-voltage-luminance characterizations, we determine parameters A and C related to Shockley-Read-Hall and Auger recombination. We find that coefficient A is strongly dependent on LED size, indicating a drastic effect of sidewall defects on the performance of LEDs. On the other hand, coefficient C is independent of LED size. This latter result demonstrates that efficiency droop does not depend on LED size. Published by AIP Publishing.