Protecting the properties of monolayer MoS₂ on silicon based substrates with an atomically thin buffer.
Protecting the properties of monolayer MoS₂ on silicon based substrates with an atomically thin buffer.
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DOI：
10.1038/srep20890
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发表时间：
2016-02-12
影响因子：
4.6
通讯作者：
Dani KM
中科院分区：
文献类型：
--
作者：
Man MK;Deckoff-Jones S;Winchester A;Shi G;Gupta G;Mohite AD;Kar S;Kioupakis E;Talapatra S;Dani KM
半导体二维材料，如过渡金属二硫属化物（TMD），由于其在光电器件、谷电子方案和半导体到金属相工程中的潜力而受到广泛关注。然而，与石墨烯和其他原子级薄材料一样，当放置在硅等衬底上时，它们会失去关键特性，包括光致发光的淬灭，扭曲的晶体结构和粗糙的表面形态。在标准硅基衬底上保护单层TMD（如二硫化钼（MoS2））的这些特性的能力将使其能够用于光电器件和科学研究。在这里，我们表明，一个原子级薄的缓冲层的六方氮化硼（hBN）保护的范围内的关键光电，结构和形态学特性的单层二硫化钼硅基衬底。hBN缓冲区恢复尖锐的衍射图案，提高单层平坦度近两个数量级，并导致超过一个数量级的光致发光增强，相比裸Si和SiO2基板。我们的演示提供了一种将MoS2和其他2D单层集成到标准Si衬底上的方法，从而促进了它们的技术应用和科学研究。
Semiconducting 2D materials, like transition metal dichalcogenides (TMDs), have gained much attention for their potential in opto-electronic devices, valleytronic schemes, and semi-conducting to metallic phase engineering. However, like graphene and other atomically thin materials, they lose key properties when placed on a substrate like silicon, including quenching of photoluminescence, distorted crystalline structure, and rough surface morphology. The ability to protect these properties of monolayer TMDs, such as molybdenum disulfide (MoS2), on standard Si-based substrates, will enable their use in opto-electronic devices and scientific investigations. Here we show that an atomically thin buffer layer of hexagonal-boron nitride (hBN) protects the range of key opto-electronic, structural, and morphological properties of monolayer MoS2 on Si-based substrates. The hBN buffer restores sharp diffraction patterns, improves monolayer flatness by nearly two-orders of magnitude, and causes over an order of magnitude enhancement in photoluminescence, compared to bare Si and SiO2 substrates. Our demonstration provides a way of integrating MoS2 and other 2D monolayers onto standard Si-substrates, thus furthering their technological applications and scientific investigations.