Determination of Trapping Parameters of Tl2In2S3Se Layered Single Crystal by Thermoluminescence
Determination of Trapping Parameters of Tl2In2S3Se Layered Single Crystal by Thermoluminescence
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DOI：
10.1002/crat.201700134
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发表时间：
2018-04-01
影响因子：
1.5
通讯作者：
Gasanly, Nizami
中科院分区：
文献类型：
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作者：
Guler, Ipek;Gasanly, Nizami
利用热释光（TL）测量了Tl_2In_2S_3Se层状单晶中的陷阱态。热释光实验在10 ~ 300 K和0.2 ~ 1.0 K·s ~（-1）的升温速率下进行。从初始上升和曲线拟合方法的分析，陷阱的激活能为23 meV。陈氏方法也被用来寻找活化能。通过这种技术，TL辉光曲线的激活能计算为25毫电子伏。从Chen方法和曲线拟合方法两方面，发现了Tl_2In_2S_3Se晶体中存在混合动力学级，并从曲线拟合的结果中找出了俘获陷阱中心的截面。在0.8K·s（-1）的恒定升温速率下，研究了不同光照温度下晶体的陷阱分布。光照温度在10 ~ 22 K之间变化。由于光照温度的增加，峰最大值移动到更高的温度和TL曲线的强度降低。这一现象表明，在Tl_2In_2S_3Se层状单晶中存在准连续的陷阱分布。
Thermoluminescence (TL) measurements are performed to evaluate the trap states in Tl2In2S3Se layered single crystals. TL experiments are conducted with varying temperature from 10 to 300 K and warming rates from 0.2 to 1.0 K s(-1). From the analysis of both initial rise and curve fitting methods, the activation energy of the traps is obtained as 23 meV. The Chen's method is also used to find activation energy. By means of this technique, the activation energy of the TL glow curve is calculated as 25 meV. From both Chen's method and curve fitting method, the existence of mixed order of kinetics in Tl2In2S3Se crystal is found. The cross section to capture of the trap center is found out from the results of curve fitting method. The trap distribution of the crystals is investigated with different temperatures of illumination at a constant warming rate of 0.8 K s(-1). The temperatures of illumination change from 10 to 22 K. As a result of the increase in temperatures of illumination, the peak maximum values move to higher temperatures and intensity of the TL curves decreases. This behavior shows us that quasicontinuous traps distribution is present in Tl2In2S3Se layered single crystals.