Enhancement of low-field magneto-dielectric response in two-dimensional Co/AlF granular films
Enhancement of low-field magneto-dielectric response in two-dimensional Co/AlF granular films
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DOI：
10.1063/1.4976743
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发表时间：
2017-02
影响因子：
4
通讯作者：
Yang Cao;N. Kobayashi;Yiwen Zhang;S. Ohnuma;H. Masumoto
中科院分区：
文献类型：
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作者：
Yang Cao;N. Kobayashi;Yiwen Zhang;S. Ohnuma;H. Masumoto
我们报道了二维（2D）Co/氟化铝（AlF）颗粒膜的增强低场磁介电（MD）响应，该颗粒膜由2D晶态Co颗粒层压AlF非晶层组成。我们观察到在低磁场下的MD灵敏度的增加作为Co层厚度的增加。在小磁场（H = 1000 Oe）下，Co（3 nm）/AlF（5 nm）薄膜的MD比增大，Δe′/e′ = 0.8%。低场增强被确定为是由增加颗粒尺寸和对密度以及磁性颗粒层中的超顺磁性和铁磁性成分之间的平衡引起的。二维颗粒结构开辟了另一条途径，在室温下定制高性能MD设备的磁电性能。
We report enhanced low-field magneto-dielectric (MD) response in two-dimensional (2D) Co/Al fluoride (AlF) granular films, which comprise 2D crystalline Co granules laminated by AlF amorphous layers. We observed an increase in MD sensitivity under a low magnetic field as the Co layer thickness increased. A small magnetic field (H = 1000 Oe) resulted in a large MD ratio, up to Δe′/e′ = 0.8% in Co (3 nm)/AlF (5 nm) films. The low-field enhancement was determined to be caused by increasing the granule size and pair density and by the balance between the superparamagnetic and ferromagnetic components in the magnetic granular layers. The 2D granular structure opens another avenue for tailoring magneto-electric properties in high-performance MD devices at room temperature.