Thermally Stable Inorganic Perovskite Solar Cells
Thermally Stable Inorganic Perovskite Solar Cells
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热稳定无机钙钛矿太阳能电池
DOI：
10.1109/pvsc45281.2020.9300970
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
V. Dalal
中科院分区：
文献类型：
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作者：
Harshavardhan A. Gaonkar;Junhao Zhu;Ranjith Kottokkaran;M. Noack;V. Dalal
我们报告的生长和性能的热稳定，高带隙钙钛矿太阳能电池沉积使用逐层真空沉积生长技术。该材料是Pb、Cs、Br和I的合金。通过使用无机阳离子钙钛矿，我们消除了与有机阳离子如甲胺和甲脒相关的热不稳定性。X射线测量表明，即使在生长后在300°C下退火，材料的组成也没有变化，这与具有有机阳离子的材料在100 °C-125 °C下退火后分解的情况形成鲜明对比。当钙钛矿太阳能电池被部署在环境温度接近50°C并且电池温度接近100°C的真实的生活沙漠环境中时，热稳定性是重要的。使用无机n层（CdS）和有机p层（P3 HT）制备了n-i-p配置的覆层器件，并且该器件在高达300 °C的退火下也是热稳定的。将Br添加到I中显著提高了对水分的稳定性，并且还使材料在室温和350°C之间的所有温度下稳定，同时将带隙增加到1.87 eV范围，这适合于制造具有Si或CIGS的串联电池。器件效率约为12%，各种器件之间的性能具有出色的均匀性。详细测量的基本属性，如缺陷密度和Urbach能量的尾态，并显示低的中间带隙缺陷密度在1015/cm 3-eV的范围内，在0.53 eV的峰值低于导带和Urbach能量在20 meV的范围内。
We report on the growth and properties of thermally stable, high bandgap perovskite solar cells deposited using a layer-by-layer vacuum deposition growth technique. The material was an alloy of Pb, Cs, Br and I. By using an inorganic cation perovskite we eliminated the thermal instability associated with organic cations such as methyl-amine and formamidine. X-ray measurements reveal that there is no change in the composition even when the material is annealed at 300°C after growth, in marked contrast with the case for a material with organic cations which decompose after anneals at 100 °C-125 °C. Thermal stability is important when perovskite solar cells are to be deployed in real life desert environments where the ambient temperatures approach 50°C and the cell temperatures approach 100°C. Superstrate devices in n-i-p configuration were prepared using an inorganic n layer (CdS) and an organic p layer (P3HT), and the devices were also thermally stable up to an anneal of 300 °C. Adding Br to I significantly improved the stability against moisture, and also makes the material stable at all temperatures between room temperature and 350°C, while increasing the bandgap to 1.87 eV range, which is suitable for making a tandem cell with Si or CIGS. Device efficiencies of ~12% were achieved with an excellent uniformity of performance between various devices. Detailed measurements of fundamental properties such as defect densities and Urbach energies of tail states were made and show low mid-gap defect densities in the range of 1015/cm3-eV with a peak at 0.53 eV below the conduction band and Urbach energy in the range of 20 meV.