Kondo-like zero-bias anomaly in electronic transport through an ultrasmall si quantum dot
Kondo-like zero-bias anomaly in electronic transport through an ultrasmall si quantum dot
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通过超小硅量子点的电子传输中类似近藤的零偏压异常
DOI：
10.1103/physrevb.60.r16319
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发表时间：
1999
影响因子：
3.7
通讯作者：
D. Tsui
中科院分区：
文献类型：
--
作者：
L. Rokhinson;L. J. Guo;S. Chou;D. Tsui
我们研究了通过超小型硅单电子晶体管的电荷传输。我们发现，在低温下，库仑封锁在某些栅极电压下会部分解除。此外，我们观察到零偏压下微分电导的增强。这种零偏压异常的磁场依赖性与 GaAs 量子点中报道的近藤峰不同：我们观察到零偏压峰没有随磁场分裂。 @S0163-1829~99!50948-X#
We have studied charge transport through an ultrasmall Si single electron transistor. We find that at low temperatures, the Coulomb blockade is partially lifted at certain gate voltages. Furthermore, we observed an enhancement of the differential conductance at zero bias. The magnetic field dependence of this zero-bias anomaly is different from that of the Kondo peaks reported in GaAs quantum dots: we observed no splitting of the zero-bias peak with magnetic field. @S0163-1829~99!50948-X#