Preparation and Properties of SrBi2Ta2O9 Ceramics
Preparation and Properties of SrBi2Ta2O9 Ceramics
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DOI：
10.1143/jjap.39.5569
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发表时间：
1998-09
影响因子：
1.5
通讯作者：
K. Shoji;Mizuka Aikawa;Y. Uehara;K. Sakata
中科院分区：
文献类型：
--
作者：
K. Shoji;Mizuka Aikawa;Y. Uehara;K. Sakata
本文的目的是研究作为电容器和/或压电材料的SrBi2Ta2O9陶瓷的制备和性能。普通烧制（OF）样品是通过传统陶瓷技术制备的。采用热锻方法制备晶粒取向（GO）样品。在优化的烧结温度（1230°C）下很容易获得密度与理论X射线密度之比为95-96%的高密度OF样品。该OF样品的居里温度为322℃，室温介电常数为135。SrBi2Ta2O9陶瓷在1230-1250℃变形不顺利，最大压缩比约为0.7。 GO样品的X射线晶粒取向因子约为0.52。 f 为 0.36 的 GO 样品的耦合系数 k33 为 17.7%。
The purpose of this paper is to investigate the preparation and properties of SrBi2Ta2O9 ceramics as capacitors and/or piezoelectric materials. Ordinarily fired (OF) samples were prepared by a conventional ceramic technique. Grain-oriented (GO) samples were prepared by the hot-forging method. High-density OF samples with density ratios of 95–96% to theoretical X-ray density were easily obtained at the optimized sintering temperature (1230°C). In this OF sample, the Curie temperature existed at 322°C, and the dielectric constant at room temperature was 135. SrBi2Ta2O9 ceramics did not deform smoothly at 1230–1250°C, and the maximum reduction ratio was about 0.7. The X-ray grain orientation factor of the GO sample was about 0.52. The coupling factor k33 of the GO sample with f of 0.36 was 17.7%.