Preparation of (Cu,Ag)2SnS3 Thin-Film Solar Cells by Sulfurizing Metal Precursors Featuring Various Ag Contents
Preparation of (Cu,Ag)2SnS3 Thin-Film Solar Cells by Sulfurizing Metal Precursors Featuring Various Ag Contents
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DOI：
10.1002/pssa.201800872
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发表时间：
2019-08-01
影响因子：
2
通讯作者：
Araki, Hideaki
中科院分区：
文献类型：
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作者：
Nakamura, Shigeyuki;Eang, Panha;Araki, Hideaki
为了扩大Cu2SnS3 （CTS）的带隙，通过对不同Ag含量的Ag-Cu-Sn前驱体进行硫化，成功地沉积了含Ag的CTS薄膜，该前驱体的Cu/Sn比恒定在1.75，这是CTS薄膜太阳能电池的最佳值。为了控制薄膜的Ag含量，前驱体Ag层的厚度在0 ~ 200 nm之间变化，对应于薄膜的Ag/(Ag + Cu)比值在0 ~ 0.32之间变化。Ag/(Ag + Cu)比小于0.16的薄膜是CTS和Ag2SnS3的固溶体，即（Cu,Ag）(2)SnS3 (CATS)，而Ag/(Ag + Cu)比为0.32的薄膜则是CATS和Ag- sn - s相关晶体（如Ag8SnS6）的混合物。随着Ag/(Ag + Cu)比的增大，晶粒尺寸增大，带隙增大，达到0.16。当Ag/(Ag + Cu)比为0.08时，电池的最高功率转换效率（PCE）为3.6%。得到了CATS薄膜太阳能电池的最高开槽电压（V-OC）为0.284 mV。然而，PCE的提高是由于电池的短路电流密度和填充因子的增加，而不是V-OC的增加。
To enlarge the bandgap of Cu2SnS3 (CTS), Ag-incorporating CTS thin films are successfully deposited by sulfurizing Ag-Cu-Sn precursors featuring various Ag contents and the constant Cu/Sn ratio of 1.75, which is the optimal value for CTS thin-film solar cells. To control the Ag content of the films, the thickness of the Ag layers of the precursors is varied from 0 to 200 nm, which corresponds to the Ag/(Ag + Cu) ratio of the films varying from 0 to 0.32. The films featuring Ag/(Ag + Cu) ratios smaller than 0.16 are solid solutions of CTS and Ag2SnS3, that is, (Cu,Ag)(2)SnS3 (CATS), while the film featuring the Ag/(Ag + Cu) ratio of 0.32 appears to be a mixture of CATS and Ag-Sn-S related crystals, such as Ag8SnS6. The grain size and bandgap increase as the Ag/(Ag + Cu) ratio increases up to 0.16. The highest power conversion efficiency (PCE) of 3.6% is obtained for the cell featuring the Ag/(Ag + Cu) ratio of 0.08. The highest open cell voltage (V-OC) for the CATS thin-film solar cells is obtained to be 0.284 mV. However, the improvement in PCE is attributed to the increase in the short-circuit current density and fill factor of the cell rather than the increase in V-OC.