Different Fermi-level pinning positions between epitaxial and rotational Al/Si interfaces.
Different Fermi-level pinning positions between epitaxial and rotational Al/Si interfaces.
复制标题
外延和旋转 Al/Si 界面之间不同的费米能级钉扎位置。
DOI：
10.1103/physrevb.50.4893
复制
发表时间：
1994
期刊：
影响因子：
--
通讯作者：
Hirose
中科院分区：
文献类型：
--
作者：
Miura;Fujieda;Hirose
研究了Al/Si紧密接触的肖特基势垒高度（SBH）与界面晶体学取向的关系，并通过透射电子显微镜观察到。利用分子束低温外延技术，通过控制表面结构，在Si（111）和（100）面上分别获得了Al的外延和旋转薄膜。对n型和p型样品的SBH测量表明，在界面处缺乏外延对准显著降低了（111）和（100）表面上接触的费米能级钉扎位置。
Schottky-barrier height (SBH) for intimate Al/Si contacts is investigated in relation to the interfacial crystallographic alignment, which is observed by transmission-electron microscopy. Epitaxial and rotational Al films are obtained by low-temperature molecular-beam epitaxy on both Si (111) and (100) surfaces, by controlling the surface structures. The SBH measurements for n-and p-type samples reveal that the absence of epitaxial alignment at the interfaces significantly lowers the Fermi-level pinning position for the contacts on both (111) and (100) surfaces.