Magnetic proximity effect in the heterostructures of topological insulators and SrRuO3
Magnetic proximity effect in the heterostructures of topological insulators and SrRuO3
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DOI：
10.1063/5.0147158
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发表时间：
2023-05
影响因子：
4
通讯作者：
Qingqing Miao;C. Kang;Yeheng Song;Weifeng Zhang
中科院分区：
文献类型：
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作者：
Qingqing Miao;C. Kang;Yeheng Song;Weifeng Zhang
通过磁邻近效应在拓扑绝缘体中引入磁序可以打破拓扑表面态的时间反演对称性，从而产生各种奇异的物理现象，有望应用于自旋电子器件中。然而，在迄今为止获得的拓扑绝缘体/铁磁体异质结构中，界面杂化太弱，难以在拓扑绝缘体中诱导足够强的磁性。在这项工作中，我们研究了Bi 2 Te 3（Sb 2 Te 3）/SrRuO 3异质结构的电输运性质，并证明了磁邻近效应的存在。Bi_2Te_3（Sb_2Te_3）/SrRuO_3异质结构的居里温度提高了约25 K。磁电阻中的矫顽场被抑制，Bi 2 Te 3（Sb 2 Te 3）/SrRuO 3异质结构的霍尔曲线在高场下呈现出不同的取向和非线性行为，各向异性磁电阻由两重旋转对称变为四重对称。这为磁邻近效应的出现提供了直接证据。这一工作将有助于研究拓扑绝缘体中的磁邻近效应，并为将来自旋电子器件的研究奠定基础。
Introducing magnetic order into a topological insulator via the magnetic proximity effect can break the time-reversal symmetry of the topological surface states, resulting in a variety of exotic physical phenomena that are expected to be applied in spintronic devices. However, in the topological insulator/ferromagnet heterostructures obtained so far, the interfacial hybridization is too weak and difficult to induce sufficiently strong magnetism in the topological insulator. In this work, we investigate the electrical transport properties of Bi2Te3 (Sb2Te3)/SrRuO3 heterostructures and demonstrate the presence of the magnetic proximity effect in them. The Curie temperature of Bi2Te3 (Sb2Te3)/SrRuO3 heterostructures was found to be increased by about 25 K. The coercive field was suppressed in the magnetoresistance; the Hall curves of Bi2Te3 (Sb2Te3)/SrRuO3 heterostructures exhibited different orientations and appeared non-linear behavior at high fields, and the anisotropic magnetoresistance changed from twofold rotational symmetry to quadruple symmetry. These provide direct evidence for the emergence of the magnetic proximity effect. This work will help to study the magnetic proximity effect in the topological insulators and paves the way for spintronic devices in the future.