Influence of band structure on the apparent barrier height in scanning tunneling microscopy
Influence of band structure on the apparent barrier height in scanning tunneling microscopy
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DOI：
10.1103/physrevb.81.035426
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发表时间：
2010-01-01
影响因子：
3.7
通讯作者：
Berndt, Richard
中科院分区：
文献类型：
--
作者：
Becker, Michael;Berndt, Richard
扫描隧道显微镜在Au（111）、Ag（111）和Cu（111）表面测量的隧道势垒表观高度随偏置电压的变化而显著变化。特别是，表观势垒高度phi(a)相对于所有三个表面上的偏置极性是不对称的，这与用尖端和样品的平均功函数来简单解释phi(a)相反。隧道电流的模型计算考虑了带结构效应，描述了实验结果。
The apparent height of the tunneling barrier in scanning tunneling microscopy measured on Au(111), Ag(111), and Cu(111) surfaces is found to vary significantly with the bias voltage. In particular, the apparent barrier height phi(a) is asymmetric with respect to the bias polarity on all three surfaces, in contrast to simple interpretations of phi(a) in terms of an average work function of tip and sample. Model calculations of the tunneling current, which take band-structure effects into account, describe the experimental observations.