Investigation of electric field threshold of GaAs photoconductive semiconductor switch triggered by 1.6 mu J laser diode
Investigation of electric field threshold of GaAs photoconductive semiconductor switch triggered by 1.6 mu J laser diode
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1.6μJ激光二极管触发GaAs光电导半导体开关电场阈值研究
DOI：
10.1063/1.4863738
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发表时间：
2014
影响因子：
4
通讯作者：
Cao Juncheng
中科院分区：
文献类型：
--
作者：
Shi Wei;Jiang Huan;Li Mengxia;Ma Cheng;Gui Huaimeng;Wang Luyi;Xue Pengbo;Fu Zhanglong;Cao Juncheng
