Single-qubit-gate error below 10-4 in a trapped ion
Single-qubit-gate error below 10-4 in a trapped ion
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DOI：
10.1103/physreva.84.030303
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发表时间：
2011-09-14
影响因子：
2.9
通讯作者：
Wineland, D. J.
中科院分区：
文献类型：
--
作者：
Brown, K. R.;Wilson, A. C.;Wineland, D. J.
对于Be-9（+）捕获离子超精细态量子比特，我们证明了每个随机单量子比特门的错误概率为2.0（2）x 10（-5），低于通常认为足以用于容错量子计算的阈值估计10（-4）。Be-9（+）离子被捕获在微制造的表面电极离子阱上方，并通过施加到阱电极的微波进行操纵。实现低单量子比特门错误是构建可扩展量子计算机的重要一步。
With a Be-9(+) trapped-ion hyperfine-state qubit, we demonstrate an error probability per randomized single-qubit gate of 2.0(2) x 10(-5), below the threshold estimate of 10(-4) commonly considered sufficient for fault-tolerant quantum computing. The Be-9(+) ion is trapped above a microfabricated surface-electrode ion trap and is manipulated with microwaves applied to a trap electrode. The achievement of low single-qubit-gate errors is an essential step toward the construction of a scalable quantum computer.