PSEUDO-GAP FEATURES OF INTRINSIC TUNNELING IN (HgBr2)-Bi2212 SINGLE CRYSTALS
PSEUDO-GAP FEATURES OF INTRINSIC TUNNELING IN (HgBr2)-Bi2212 SINGLE CRYSTALS
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(HgBr2)-Bi2212 单晶中本征隧道的赝能隙特征
DOI：
10.1142/s0217979299003878
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发表时间：
1999
影响因子：
1.7
通讯作者：
J. Choy
中科院分区：
文献类型：
--
作者：
A.Yurgens;D.Winkler;T. Hwang;J. Choy
原始 Bi2212 及其 HgBr2 插层物的 c 轴隧道特性已在 4.2-250 K 的温度范围内测量。研究了这些单晶表面上的光刻图案 7-10 晶胞高度台面结构。已观察到在 c 轴方向施加电流的清晰的类似 SIS 的隧道曲线。动态电导 dI/dV(V) 显示出与超导间隙边缘相对应的尖峰和超出间隙的下降特征，然后是一个宽的最大值，该最大值一直持续到室温。 c 轴电阻的温度依赖性形状在插入后没有改变，表明 CuO2 双层之间的耦合对赝能隙影响很小。
The c-axis tunneling properties of both pristine Bi2212 and its HgBr2 intercalate have been measured in the temperature range 4.2-250 K. Lithographically patterned 7-10 unit-cell heigh mesa structures on the surfaces of these single crystals were investigated. Clear SIS-like tunneling curves for current applied in the c-axis direction have been observed. The dynamic conductance dI/dV(V) shows both sharp peaks corresponding to a superconducting gap edge and a dip feature beyond the gap, followed by a wide maximum, which persists up to a room temperature. Shape of the temperature dependence of the c-axis resistance does not change after the intercalation suggesting that a coupling between CuO2-bilayers has little effect on the pseudogap.