Bulk crystal growth and surface preparation of NiSb, MnSb, and NiMnSb
Bulk crystal growth and surface preparation of NiSb, MnSb, and NiMnSb
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DOI：
10.1116/1.4953549
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发表时间：
2016-06
期刊：
影响因子：
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通讯作者：
I. Maskery;C. Burrows;M. Walker;R. Singh;G. Balakrishnan;J. Duffy;G. Bell
中科院分区：
文献类型：
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作者：
I. Maskery;C. Burrows;M. Walker;R. Singh;G. Balakrishnan;J. Duffy;G. Bell
NiSb、MnSb 和 NiMnSb 的块状单晶和多晶样品已经生长并进行了表征。 NiMnSb 的晶格参数为 5.945 ± 0.001 A，比之前的报道大约 0.25%。使用 X 射线光电子能谱研究了这些材料的表面处理。 HCl 湿法蚀刻和氩离子溅射与真空退火同时使用。对于这两种二元材料，仅通过 HCl 蚀刻和退火即可重新获得清洁且化学计量的表面。然而，这些方法未能成功制备出清洁且化学计量的三元NiMnSb。对所有三种材料的过渡金属 2p 和 3p 水平进行了分析。
Bulk single crystal and polycrystalline samples of NiSb, MnSb, and NiMnSb have been grown and characterized. The lattice parameter of NiMnSb was found to be 5.945 ± 0.001 A, around 0.25% larger than previous reports. The surface preparation of these materials was investigated using x-ray photoelectron spectroscopy. Wet etching with HCl and argon ion sputtering were used in tandem with vacuum annealing. For both binary materials, a clean and stoichiometric surface could be regained by HCl etching and annealing alone. However, clean and stoichiometric ternary NiMnSb was not successfully prepared by these methods. The transition metal 2p and 3p levels are analyzed for all three materials.