A hybrid silicon evanescent quantum dot laser
A hybrid silicon evanescent quantum dot laser
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DOI：
10.7567/apex.9.092102
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发表时间：
2016-07
影响因子：
2.3
通讯作者：
Bongyong Jang;K. Tanabe;S. Kako;S. Iwamoto;T. Tsuchizawa;H. Nishi;N. Hatori;M. Noguchi;Takahiro Nakamura;K. Takemasa;M. Sugawara;Y. Arakawa
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文献类型：
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作者：
Bongyong Jang;K. Tanabe;S. Kako;S. Iwamoto;T. Tsuchizawa;H. Nishi;N. Hatori;M. Noguchi;Takahiro Nakamura;K. Takemasa;M. Sugawara;Y. Arakawa
我们报告的第一个演示的混合硅量子点（QD）激光器，倏逝耦合到硅波导。采用直接键合的方法将具有薄AlGaAs下包层的InAs/GaAs量子点激光器结构转移到具有绝热锥形结构和分布布拉格反射器的硅波导上。激光器在脉冲电流条件下工作温度高达115 °C，特征温度T0为303 K，接近室温。此外，通过将GaAs/AlGaAs梅萨的宽度减小至8 µm，可在25 °C下实现连续波工作。
We report the first demonstration of a hybrid silicon quantum dot (QD) laser, evanescently coupled to a silicon waveguide. InAs/GaAs QD laser structures with thin AlGaAs lower cladding layers were transferred by direct wafer bonding onto silicon waveguides defining cavities with adiabatic taper structures and distributed Bragg reflectors. The laser operates at temperatures up to 115 °C under pulsed current conditions, with a characteristic temperature T0 of 303 K near room temperature. Furthermore, by reducing the width of the GaAs/AlGaAs mesa down to 8 µm, continuous-wave operation is realized at 25 °C.