Improved photoelectrical properties of n-ZnO/p-Si heterojunction by inserting an optimized thin Al2O3 buffer layer
Improved photoelectrical properties of n-ZnO/p-Si heterojunction by inserting an optimized thin Al2O3 buffer layer
复制标题
通过插入优化的薄 Al2O3 缓冲层改善 n-ZnO/p-Si 异质结的光电性能
作者：
Lu, Hong-Liang;Gu, Yu-Zhu;Zhang, Yuan;Liu, Xin-Yan;Wang, Peng-Fei;Sun, Qing-Qing;Ding, Shi-Jin;Zhang, David Wei
