Experimental study of nanoscale Co damascene BEOL interconnect structures
Experimental study of nanoscale Co damascene BEOL interconnect structures
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纳米级Co镶嵌BEOL互连结构的实验研究
DOI：
10.1109/iitc-amc.2016.7507673
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
S. Siddiqui
中科院分区：
文献类型：
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作者：
J. Kelly;C. ChenJim;Huai Huang;Chenming Hu;E. Liniger;R. Patlolla;B. Peethala;P. Adusumilli;H. Shobha;T. Nogami;T. Spooner;E. Huang;D. Edelstein;D. Canaperi;V. Kamineni;F. Mont;S. Siddiqui
我们描述了集成的双damascene Co和Cu BEOL线和通孔，在10纳米节点尺寸。24 nm和220 nm宽的Co / Cu线电阻比分别为2.1和3.5。Co的通孔电阻仅为Cu的1.7倍，其中较小的比例归因于阻挡层串联通孔电阻。Co通过链结构的电连续性良好，而一些链链短路和泄漏表明Co抛光过程中有金属残留物。采用传统BEOL工艺制备的Co线和通孔在透射电镜下显示出良好的Co填充，电介质中没有可见的Co证据。相对较小的Co通孔电阻增加表明潜在的通孔电阻效益，可以采用更薄或更小的电阻屏障。直到下一个技术节点之后，Co线电阻才可能与Cu竞争。
We characterize integrated dual damascene Co and Cu BEOL lines and vias, at 10 nm node dimensions. The Co to Cu line resistance ratios for 24 nm and 220 nm wide lines were 2.1 and 3.5, respectively. The Co via resistance was just 1.7 times that of Cu, with the smaller ratio attributed to the barrier layer series via resistance. Electrical continuity of Co via chain structures was good, while some chain-chain shorts and leakage suggests metal residuals from the Co polish process. The Co lines and vias, fabricated using conventional BEOL processes, exhibit good Co fill by TEM, with no visible evidence of Co in the dielectric. The relatively smaller resistance increase for Co vias suggests a potential via resistance benefit, a thinner or less resistive barrier can be employed. Co line resistance will likely not be competitive with Cu until after the next technology node.