Optical band gap of indium nitride
Optical band gap of indium nitride
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DOI：
10.1063/1.336906
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发表时间：
1986-05
影响因子：
3.2
通讯作者：
T. Tansley;C. Foley
中科院分区：
文献类型：
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作者：
T. Tansley;C. Foley
据报道，通过反应射频溅射制备的氮化铟薄膜的室温光学吸收数据在 1.5-2.5 eV 范围内。高纯度材料的基本吸收边位于 1.89±0.01 eV，对应于 k=0 时的直接跃迁，与能带结构计算一致。当载流子浓度超过 1019 cm−3 时，会出现显着的 Moss-Burstein 位移，并遵循经验关系 EG =1.89+2.1×10−8 n1/3 eV。
Room‐temperature optical absorption data in the 1.5–2.5‐eV range are reported for indium nitride thin films prepared by reactive radio‐frequency sputtering. The fundamental absorption edge in high‐purity material is located at 1.89±0.01 eV and corresponds to a direct transition at k=0, in agreement with band‐structure calculations. A significant Moss‐Burstein shift is noted for carrier concentrations in excess of 1019 cm−3 and obeys the empirical relationship EG =1.89+2.1×10−8 n1/3 eV.