1.5-microm monolithic GaInNAs semiconductor saturable-absorber mode locking of an erbium fiber laser.
1.5-microm monolithic GaInNAs semiconductor saturable-absorber mode locking of an erbium fiber laser.
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DOI：
10.1364/ol.28.000364
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发表时间：
2003-03
期刊：
影响因子：
3.6
通讯作者：
O. Okhotnikov;T. Jouhti;J. Konttinen;S. Karirinne;M. Pessa
中科院分区：
文献类型：
--
作者：
O. Okhotnikov;T. Jouhti;J. Konttinen;S. Karirinne;M. Pessa
我们提出了一种新的单块GaAs基半导体可饱和吸收器工作在1.55微米。利用GaInNAs/GaAs材料系统外延生长的吸收镜成功地实现了掺铒光纤激光器的锁模。GaInNAs材料系统具有令人感兴趣的物理性质，为工作在1.3-1.55微米波长范围的激光器和非线性光学器件提供了巨大的潜力。
We present a new monolithic GaAs-based semiconductor saturable absorber operating at 1.55 microm. An epitaxially grown absorber mirror in a GaInNAs/GaAs material system was successfully used to mode lock an erbium-doped fiber laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.3-1.55-microm wavelength range.