Tunneling diodes based on polymer infiltrated vertically aligned carbon nanotube forests
Tunneling diodes based on polymer infiltrated vertically aligned carbon nanotube forests
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DOI：
10.1088/1361-6528/ab9bd6
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发表时间：
2020-06
期刊：
影响因子：
3.5
通讯作者：
Erik C. Anderson;A. Patel;J. Preston;B. Cola
中科院分区：
文献类型：
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作者：
Erik C. Anderson;A. Patel;J. Preston;B. Cola
报道了一种用于高频光电子学的垂直排列碳纳米管(VACNT)阵列的金属-绝缘体-金属二极管的制备和表征。本研究采用聚二甲基硅氧烷(PDMS)和环氧树脂作为渗透介质。VACNT森林嵌入聚合物形成平坦化的表面，在该表面上制造了隧道二极管阵列。由氧化铝和HfO2介质多层组成的二极管实现了高度非线性和不对称的电流-电压特性。结果表明，尽管不对称性、电阻和器件寿命之间存在很强的相关性，但通过多绝缘子势垒调谐可以实现超过92的不对称性。凭借我们性能最好、最稳定的器件结构(PDMS-VACNT/Al_2O_3-HfO_2-Al_2O_3-HfO_2/PEDOT：PSS)，我们提供了光学-直流转换的演示。整流波长为638 nm，电流响应度为0.65µA W−1。它能够与溶液处理材料和软光刻技术相集成，创建用于光学和红外检测的灵活设备。
We report the fabrication and characterization of metal–insulator–metal diodes incorporating vertically aligned carbon nanotube (VACNT) arrays encased in polymer for applications in high frequency optoelectronics. Polydimethylsiloxane (PDMS) and epoxy infiltrating media are used in this study. VACNT forests are embedded with polymer to form a planarized surface over which an array of tunneling diodes is fabricated. Diodes comprising Al2O3 and HfO2 dielectric multilayers achieve highly nonlinear and asymmetric current-voltage characteristics. Results show that asymmetry in excess of 92 can be achieved with multi-insulator barrier tuning, though there is a strong correlation between asymmetry, resistance, and device longevity. With our best performing and most stable device structure (PDMS–VACNT/Al2O3-HfO2-Al2O3-HfO2/PEDOT:PSS), we provide a demonstration of optical-to-d.c. rectification at 638 nm, realizing a current responsivity of 0.65 µA W−1. Our approach to fabricating these VACNT diode arrays is facile and highly scalable. It is capable of being integrated with solution-processed materials and soft lithography techniques to create flexible devices for optical and infrared detection.