Oscillatory relaxation of surface photovoltage on a silicon surface
Oscillatory relaxation of surface photovoltage on a silicon surface
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DOI：
10.1103/physrevb.87.235308
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发表时间：
2013-06
影响因子：
3.7
通讯作者：
M. Ogawa;S. Yamamoto;R. Yukawa;R. Hobara;C. Lin;Ro-Ya Liu;Shu-Jung Tang;I. Matsuda
中科院分区：
文献类型：
--
作者：
M. Ogawa;S. Yamamoto;R. Yukawa;R. Hobara;C. Lin;Ro-Ya Liu;Shu-Jung Tang;I. Matsuda
在Si（111）表面上进行了光导光谱的时间分辨测量，以追踪表面光电压作用后表面电位的变化。发现了两个衰减时间为纳秒和数百纳秒的弛豫过程，分别用隧道和热离子弛豫方案进行了解释。在高激光功率密度下，弛豫变为振荡，其时间周期为几十纳秒。
Time-resolved measurement of photoemission spectroscopy was made to trace a change of surface potential after the surface photovoltage effect on a Si(111)surface. Two relaxation processes were found with decay times of nanoseconds and hundreds of nanoseconds, which are explained in terms of the tunneling and the thermionic relaxation schemes, respectively. At the high laser power density, the relaxation has become oscillatory with a temporal period of several tens of nanoseconds.