Fabrication of amorphous silicon nitride thin films by radio-frequency sputtering assisted by an inductively coupled plasma
Fabrication of amorphous silicon nitride thin films by radio-frequency sputtering assisted by an inductively coupled plasma
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DOI:
10.1016/j.tsf.2017.01.022
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发表时间:
2017-02
期刊:
影响因子:
2.1
通讯作者:
Y. Ishii;T. Kaneko;K. Okimura;H. Shindo;M. Isomura
中科院分区:
文献类型:
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作者:
Y. Ishii;T. Kaneko;K. Okimura;H. Shindo;M. Isomura