Stable ferroelectric properties of Hf0.5Zr0.5O2 thin films within a broad working temperature range
Stable ferroelectric properties of Hf0.5Zr0.5O2 thin films within a broad working temperature range
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DOI：
10.7567/1347-4065/ab3844
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发表时间：
2019-08
影响因子：
1.5
通讯作者：
Dao Wang;Jiali Wang;Qiang Li;Waner He;M. Guo;A. Zhang;Z. Fan;Deyang Chen;M. Qin;M. Zen
中科院分区：
文献类型：
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作者：
Dao Wang;Jiali Wang;Qiang Li;Waner He;M. Guo;A. Zhang;Z. Fan;Deyang Chen;M. Qin;M. Zen
研究了20 nm Hf0.5Zr0.5O2（HZO）薄膜在100 ~ 450 K温度范围内的铁电性能。HZO薄膜的剩余极化率从24.6 μC cm−2（100 K）略微下降到17.9 μC cm−2（450 K），表明具有稳定的温度稳定性。该电容器在100 K和300 K下也表现出优异的耐久性能，达到109次循环，并且在450 K的高温下其耐久循环略微下降到108次。结果表明，HZO铁电薄膜在各种恶劣温度环境下具有巨大的应用潜力。
The ferroelectric properties of 20 nm Hf0.5Zr0.5O2 (HZO) thin films has been investigated in a wide temperature range from 100 K to 450 K. The remnant polarization of HZO thin films decreases slightly from 24.6 μC cm−2 (100 K) to 17.9 μC cm−2 (450 K), indicating a robust temperature stability. The capacitors also exhibit excellent endurance properties up to 109 cycles at 100 K and 300 K, and their endurance cycles slightly degrades to 108 at an elevated temperature of 450 K. The results show that HZO ferroelectric thin films have great potential for future emerging memory applications in various harsh temperature environments.