Blueshift of intersubband transition wavelength in AlN/GaN multiple quantum wells by low temperature metal organic vapor phase epitaxy using pulse injection method
Blueshift of intersubband transition wavelength in AlN/GaN multiple quantum wells by low temperature metal organic vapor phase epitaxy using pulse injection method
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DOI：
10.1063/1.3254230
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发表时间：
2009-10
影响因子：
4
通讯作者：
Jung-Seung Yang;H. Sodabanlu;M. Sugiyama;Y. Nakano;Y. Shimogaki
中科院分区：
文献类型：
--
作者：
Jung-Seung Yang;H. Sodabanlu;M. Sugiyama;Y. Nakano;Y. Shimogaki
AlN/GaN 多量子阱 (MQW) 通过金属有机气相外延 (MOVPE) 系统使用脉冲注入方法在不同的生长温度下生长，并研究了它们的子带间跃迁 (ISBT) 特性。使用在 770 °C 下生长的 MQW 实现了在室温下测量的 1.58 μm 的强 ISBT，其吸收性能是使用 GaN 缓冲层的 MOVPE 系统中报道的最佳吸收性能。通过降低生长温度观察到 ISB 吸收波长的明显蓝移，这表明 MQW 内的相互扩散在较低的生长温度下受到抑制。
AlN/GaN multiquantum wells (MQWs) were grown at different growth temperatures via a metal organic vapor phase epitaxy (MOVPE) system using a pulse injection method and their intersubband transition (ISBT) properties were investigated. Strong ISBT at 1.58 μm measured at room temperature was realized with MQWs grown at 770 °C and its absorption properties was the best reported in MOVPE system using GaN buffer layer. Clear blueshift of ISB absorption wavelength by lowering growth temperature was observed, which suggests that interdiffusion within MQWs was suppressed at lower growth temperatures.