A behavioral model of unipolar resistive RAMs and its application to HSPICE integration
A behavioral model of unipolar resistive RAMs and its application to HSPICE integration
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DOI：
10.1587/elex.7.1467
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发表时间：
2010-10
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影响因子：
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通讯作者：
Nobuo Akou;T. Asai;T. Yanagida;T. Kawai;Y. Amemiya
中科院分区：
文献类型：
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作者：
Nobuo Akou;T. Asai;T. Yanagida;T. Kawai;Y. Amemiya
我们提出了一个单极电阻RAM（ReRAM）的行为模型。该模型集成了单极ReRAM的三个行为特征;即，i）瞬态电压脉冲的ON/OFF电阻切换特性，ii）表现出具有电流顺应性的ON/OFF电阻切换的I-V特性，以及iii）ON电阻和OFF阈值电流两者的电流顺应性依赖性。该模型是由三个非线性微分方程与几个静态功能，这使我们能够在任何数值或电路模拟器采用该模型。作为一个例子，我们集成的HSPICE模型，并显示模拟结果使用的实验参数提取的二氧化钛薄膜的ReRAM。
We propose a behavioral model of unipolar resistive RAMs (ReRAMs). The model integrates three behavioral characteristics of unipolar ReRAMs; i.e., i) ON/OFF resistive switching characteristics for transient voltage pulses, ii) I-V characteristics exhibiting ON/OFF resistive switching with current compliance, and iii) current-compliance dependence of both ON resistance and OFF threshold currents. The model is described by three nonlinear differential equations with several static functions, which enables us to employ the model in any numerical or circuit simulator. As an example, we integrate the model on HSPICE, and show the simulated results using experimental parameters extracted from fabricated ReRAMs of TiO2 thin films.