Strong photoluminescence at 1.3 μm with a narrow linewidth from nitridized InAs/GaAs quantum dots
Strong photoluminescence at 1.3 μm with a narrow linewidth from nitridized InAs/GaAs quantum dots
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DOI：
10.1063/1.2210789
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发表时间：
2006-06-05
影响因子：
4
通讯作者：
Jang, J. W.
中科院分区：
文献类型：
--
作者：
Jang, Y. D.;Kim, N. J.;Jang, J. W.
采用金属-有机化学气相沉积法制备氮化量子点。这些量子点在室温下均表现出1.3 μ m的强光致发光（PL）发射，30 meV的窄光谱宽度，基态和第一激发态之间的大间距为98 meV。有趣的是，氮化量子点的PL峰位置都在1.3 Am左右，尽管这些量子点是用不同的氮量制备的。时间分辨PL显示量子点之间没有电子耦合。这些特性可能使这些氮化量子点成为制造1.3 μ m发射器件的非常有用的候选者。(c) 2006年美国物理研究所。
Nitridized quantum dots (QDs) were prepared by metal-organic chemical vapor deposition. These QDs all showed strong photoluminescence (PL) emission at 1.3 mu m at room temperature, narrow spectral widths of 30 meV, and large separations of 98,meV between the ground and first excited states. Interestingly, the PL peak positions of the nitridized QDs were all,around 1.3 Am, despite the QDs having been prepared using significantly different amounts of nitrogen. Time-resolved PL revealed no electronic coupling between the QDs. These properties could potentially make these nitridized QDs very useful candidates for the fabrication of devices emitting at 1.3 mu m. (c) 2006 American Institute of Physics.