High ambipolar mobility in a highly ordered smectic phase of a dialkylphenylterthiophene derivative that can be applied to solution-processed organic field-effect transistors
High ambipolar mobility in a highly ordered smectic phase of a dialkylphenylterthiophene derivative that can be applied to solution-processed organic field-effect transistors
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DOI：
10.1002/adma.200602319
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发表时间：
2007-02-05
影响因子：
29.4
通讯作者：
Tamaoki, Nobuyuki
中科院分区：
文献类型：
--
作者：
Funahashi, Masahiro;Zhang, Fapei;Tamaoki, Nobuyuki
合成了一种在室温附近具有高度有序近晶相的苯基三噻吩衍生物。在近晶相的主体中，观察到双极载流子输运，并且电子迁移率超过0.2 cm（2）V-1 S-1。薄膜晶体管（参见图中的AFM图像）通过旋涂方法制造，并且表现出p型操作、0.02 cm（2）v（-1）s（-1）的场效应迁移率和10（6）的开/关比。
A phenylterthiophene derivative that exhibits a highly ordered smectic phase around room temperature is synthesized. In the bulk of the smectic phase, ambipolar carrier transport is observed and electron mobility exceeds 0.2 cm(2) V-1 S-1. Thin-film transistors (see the AFM image in the figure) are fabricated by a spin-coating method and exhibit p-type operation, a field-effect mobility of 0.02 cm(2) v(-1) s(-1), and an on/off ratio of 10(6).