Narrow-band band-pass filters on silicon substrates at 30 GHz
Narrow-band band-pass filters on silicon substrates at 30 GHz
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30 GHz 硅基板上的窄带带通滤波器
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
D. Kwong
中科院分区：
文献类型：
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作者：
D. S. Yu;C.F. Cheng;K.T. Chan;A. Chin;S. Mcalister;C. Zhu;M. Li;D. Kwong
采用优化的离子注入技术，在Si衬底上制备了频率为/spl sim/30 GHz的高性能2极和3极共面波导滤波器，具有很窄的1.0（3.1%）GHz和0.75（2.5%）GHz通带以及很小的插入损耗。硅上的微带滤波器在27 GHz时具有3.2 dB的损耗，比没有大的共面接地层的CPW情况具有更小的尺寸。相比之下，非植入过滤器失败，由于高基板损失。
Using optimized ion implantation, we have fabricated high performance 2-pole and 3-pole CPW filters on Si substrates at /spl sim/30 GHz, with very narrow 1.0 (3.1%) GHz and 0.75 (2.5%) GHz pass-band as well as small insertion loss. Microstrip filters on Si show small 3.2 dB loss at 27 GHz, which has smaller size than CPW case without the large coplanar ground planes. In contrast, the nonimplanted filters failed due to the high substrate loss.