Formation of self-aligned carbon nanotube films by surface decomposition of silicon carbide
Formation of self-aligned carbon nanotube films by surface decomposition of silicon carbide
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DOI：
10.1080/095008399177381
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发表时间：
1999-04-01
影响因子：
1.2
通讯作者：
Ito, M
中科院分区：
文献类型：
--
作者：
Kusunoki, M;Suzuki, T;Ito, M
本文描述了一种制备碳纳米管排列薄膜的简单方法及其形成机理。该对准方法是基于SIC晶圆在1500 ~ 1700℃的真空条件下表面分解的自组织，通过高分辨率透射电镜和分析电镜的截面观察结果，提出了以下形成机制：SiO气体分子通过表面氧化生成，SiO气体在表面鼓泡形成2-5 nm大小的石墨帽，其特征为（0001）sic平面。然后碳纳米管沿垂直方向生长，在连续氧化过程中侵蚀SIC晶体。
A simple method of producing aligned carbon nanotube films and a mechanism for their formation are described. The alignment method is based on the self-organization by surface decomposition of a SIC wafer in a vacuum at a temperature between 1500 and 1700 degrees C. From the results of cross-sectional observations by high-resolution transmission electron microscopy and analytical electron microscopy, the following formation mechanism is proposed: SiO gas molecules are generated by surface oxidation and graphite caps of 2-5 nm in size are formed by the bubbling of SiO gas on the surface, characterized by a (0001)sic plane. Then carbon nanotubes grow in a vertical direction, eroding the SIC crystal during the continuous oxidation.