Degradation Behavior of 850 nm AlGaAs/GaAs Oxide VCSELs Suffered from Electrostatic Discharge
Degradation Behavior of 850 nm AlGaAs/GaAs Oxide VCSELs Suffered from Electrostatic Discharge
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850 nm AlGaAs/GaAs 氧化物 VCSEL 遭受静电放电的退化行为
DOI：
10.4218/etrij.08.0108.0148
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发表时间：
2008
期刊：
影响因子：
1.4
通讯作者：
Sang
中科院分区：
文献类型：
--
作者：
Taeyong Kim;Taekjin Kim;Sangin Kim;Sang
采用人体模型研究了正向和反向静电放电（ESD）对氧化物垂直腔面发射激光器电光特性的影响。正向ESD引起的退化是复杂的，取决于ESD电压，表现出三个退化阶段，而反向ESD引起的退化相对简单，表现出两个退化阶段，由电光特性的突然独特变化划分。我们证明了阈值电流的增加主要是由于漏电流，非辐射复合电流和光损耗的增加。斜率效率的降低主要是由于光损耗的增加。
The effect of forward and reverse electrostatic discharge (ESD) on the electro‐optical characteristics of oxide vertical‐cavity surface‐emitting lasers is investigated using a human body model for the purpose of understanding degradation behavior. Forward ESD‐induced degradation is complicated, showing three degradation phases depending on ESD voltage, while reverse ESD‐induced degradation is relatively simple, exhibiting two phases of degradation divided by a sudden distinctive change in electro‐optical characteristics. We demonstrate that the increase in the threshold current is mainly due to the increase in leakage current, nonradiative recombination current, and optical loss. The decrease in the slope efficiency is mainly due to the increase in optical loss.