Photoluminescence of CdGeP2 and (Cd,Mn)GeP2
Photoluminescence of CdGeP2 and (Cd,Mn)GeP2
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CdGeP2 和 (Cd,Mn)GeP2 的光致发光
DOI：
10.1016/j.jpcs.2005.10.164
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
Katsuaki Sato
中科院分区：
文献类型：
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作者：
G. A. Medvedkin;V. Smirnov;T. Ishibashi;Katsuaki Sato
本文研究了生长在GaAs（001）衬底上的CdGeP_2（112）单晶和CdGeP_2外延薄膜的光致发光，发现它们的光谱相似，与施主/受主跃迁有关的谱带在两种物质的相近能量处，都低于黄铜矿晶体的能隙。另一方面，在CdGeP 2（112）单晶上生长（Cd，Mn）GeP 2铁磁层，使得从铁磁层和衬底都可以观察到PL。绿色激光激发（514，532 nm）产生与未掺杂CdGeP 2晶体和膜中的光致发光类似的适当的光致发光。从铁磁-铁磁异质结的额外发射发生延伸到超过主体半导体的Eg的光子能量。短波长光致发光是由于（Cd，Mn）GeP 2稀磁半导体（DMS）。这一事实表明，Mn掺杂的II-IV-V2黄铜矿更接近II-VI DMS，而不是另一种III-V族DMS，其中重Mn掺杂完全抑制了光致发光。根据温度和光谱分析，讨论了观测到的短波长辐射的特征。q 2005爱思唯尔有限公司。保留所有权利。
Photoluminescence of CdGeP2 (112) single crystal and CdGeP2 epitaxial film grown on GaAs (001) substrate have been studied and their spectral similarity found. Spectral bands associated with donor/acceptor transitions peak at close energies for both substances and all are lower than the energy gap of the chalcopyrite crystal. On the other hand, the growth of (Cd, Mn) GeP2 ferromagnetic layer on CdGeP2 (112) single crystal was performed to make it possible observation of PL from both the ferromagnetic layer and substrate. The green laser excitation (514, 532 nm) produces a proper photoluminescence similar to that in the undoped CdGeP2 crystal and film. An extra emission from the ferromagnetic‐nonmagnetic heterojunction occurs to extend up to photon energies exceeding Eg of the host semiconductor. The short wavelength photoluminescence is to be due to (Cd, Mn) GeP2 dilute magnetic semiconductor (DMS). This fact states that Mn-doped II‐IV‐V2 chalcopyrites are closer to II‐VI DMS than to another group III‐V DMS, where the heavy Mn-doping suppresses photoluminescence at all. Features of the observed short wavelength emission are discussing based on the temperature and spectral analyses. q 2005 Elsevier Ltd. All rights reserved.