Improved photovoltaic performance and device stability of planar heterojunction perovskite solar cells using TiO2 and TiO2 mixed with AgInS2 quantum dots as dual electron transport layers
Improved photovoltaic performance and device stability of planar heterojunction perovskite solar cells using TiO2 and TiO2 mixed with AgInS2 quantum dots as dual electron transport layers
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DOI：
10.1016/j.orgel.2019.02.029
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发表时间：
2019-06
影响因子：
3.2
通讯作者：
A. Kaewprajak;P. Kumnorkaew;T. Sagawa
中科院分区：
文献类型：
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作者：
A. Kaewprajak;P. Kumnorkaew;T. Sagawa
TiO2 和 TiO2 与 AgInS2 量子点混合的双电子传输层 (TiO2:AgInS2QDs) 用于平面异质结钙钛矿太阳能电池 (PSC)。在TiO2 中添加AgInS2 可以减少TiO2 颗粒间隙中的针孔。通过将 AgInS2QD 添加到 TiO2 中，沉积在 TiO2/TiO2:AgInS2QD 上的钙钛矿薄膜的 PL 强度被淬灭。使用TiO2/TiO2:AgInS2QDs作为双电子传输层提高了平面PSCs的整流比(RR)。结果，与单层TiO2器件的FF（0.73）和PCE（16.3%）相比，TiO2/TiO2:AgInS2QDs（1.6mgmL−1）器件的填充因子（FF）和功率转换效率（PCE）分别提高了0.77和17.5%。与单层TiO2器件相比，以TiO2/TiO2:AgInS2QDs为双电子传输层的器件在300nm至750nm波长范围内表现出外量子效率的提高。这一结果可能是由于 AgInS2QD 的光捕获增强以及从钙钛矿层到双电子传输层的电荷转移增强所致。当添加 1.6mgmL−1 AgInS2 时，证实了具有双电子传输层的 PSC 的长期稳定性，随后对保留的 PCE 进行封装和改进（将装置在空气中存放 15 天后），观察到从 11% 提高到 34%。如前所述，TiO2/TiO2:AgInS2QDs作为双电子传输层不仅提高了光伏性能，而且增强了其对光降解的耐久性。
Dual electron transport layers of TiO2and TiO2mixed with AgInS2quantum dots (TiO2:AgInS2QDs) were used for planar heterojunction perovskite solar cells (PSCs). The addition of AgInS2into TiO2induced a reduction of pinholes at the interspace of the grains of the TiO2. The PL intensity of the perovskite film deposited on TiO2/TiO2:AgInS2QDs was quenched by the addition of AgInS2QDs into TiO2. A rectification ratio (RR) of the planar PSCs was improved by using TiO2/TiO2:AgInS2QDs as dual electron transport layers. As a result, fill factor (FF) and power conversion efficiency (PCE) of the device with TiO2/TiO2:AgInS2QDs (1.6 mg mL−1) increased up to 0.77 and 17.5% as compared withFF(0.73) andPCE(16.3%) of the device with TiO2single layer. The device with TiO2/TiO2:AgInS2QDs as dual electron transport layers showed the improvement of the external quantum efficiency in the wavelength region from 300 nm to 750 nm as compared with that of the device with TiO2single layer. This result is probably caused by the enhancement of light harvesting by AgInS2QDs and the enhancement of the charge transfer from the perovskite layer to the dual electron transport layers. The long-term stability of the PSC with the dual electron transport layers was confirmed when 1.6 mg mL−1of AgInS2was added, followed by the encapsulation and improvement of the retainedPCE(after storing the device in air for 15 days), from 11% to 34%, as observed. As has been indicated, the TiO2/TiO2:AgInS2QDs as dual electron transport layers not only brought about improvement of photovoltaic performance but also enhanced its durability against photodegradation.