Assessment of clustering induced internal strain in AlInAs on InP grown by molecular beam epitaxy
Assessment of clustering induced internal strain in AlInAs on InP grown by molecular beam epitaxy
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分子束外延生长 InP 上 AlInAs 簇诱导内应变的评估
DOI：
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发表时间：
1994
期刊：
影响因子：
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通讯作者：
W. Richter
中科院分区：
文献类型：
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作者：
A. Hase;H. Künzel;D. Zahn;W. Richter
低温光致发光（PL）和拉曼测量进行AlInAs生长的晶格匹配的InP的分子束外延在降低的生长温度（Ts）。在高于500 °C的Ts下生长的层的PL由激子发射主导，而对于较低的Ts，施主-受主相关的跃迁占优势。在450 °C的临界Ts以下，观察到朝向较低发射能量的显著偏移，其中最大偏移接近400 °C，这归因于由于聚集而引起的修改的带边缘。通过拉曼光谱检测到可比较的趋势。所观察到的InAs和AlAs类纵向光学声子模（LOInAs和LOAlAs）分离的减少表明，由于成簇，存在局部内部应变。这种效应在400 °C时达到最大值。LOInAs的变化仅解释了这种行为。此外，在低Ts材料上观察到的LOAlAs-声子线的强烈不对称加宽表明相关长度和…
Low‐temperature photoluminescence (PL) and Raman measurements were performed on AlInAs grown lattice matched to InP by molecular beam epitaxy at reduced growth temperature (Ts). The PL of layers grown at Ts above 500 °C is dominated by excitonic emission, whereas for lower Ts donor‐acceptor related transitions prevail. Below a critical Ts of 450 °C a marked shift towards lower emission energies with a maximum shift near 400 °C is observed that is attributed to a modified band edge due to clustering. Comparable trends are detected by Raman spectroscopy. The observed reduction of the separation of the InAs‐ and AlAs‐like longitudinal optical phonon modes (LOInAs and LOAlAs) demonstrates local internal strain to be present as a result of clustering. This effect reaches a maximum for Ts at 400 °C. A shift of the LOInAs solely accounts for this behavior. In addition strong asymmetric broadening of the LOAlAs‐phonon line observed on low Ts material indicates an increasing reduction of the correlation length and...