SiC MOSFET threshold-stability issues
SiC MOSFET threshold-stability issues
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DOI：
10.1016/j.mssp.2017.11.028
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发表时间：
2018-05-01
影响因子：
4.1
通讯作者：
Habersat, Daniel B.
中科院分区：
文献类型：
--
作者：
Lelis, Aivars J.;Green, Ronald;Habersat, Daniel B.
这项工作进一步深入了解了在碳化硅金属 - 氧化物 - 半导体场效应晶体管（SiC MOSFETs）中普遍存在且程度各异的阈值电压不稳定性效应，并讨论了一种改进测试方法的必要性，以便明确区分良品和不良品。阈值电压稳定性主要受绝缘栅氧化物近界面区域的活性电荷陷阱影响。它们紧邻半导体界面，导致直接隧穿机制对栅极偏压变化具有很强的时间依赖性。偏压 - 温度应力会诱发额外的活性氧化物陷阱，这些陷阱进而会导致这种不稳定性。在现有的评估高温栅极偏压（HTGB）效应的测试方法中，没有恰当地考虑这种时间依赖性。
This work provides additional insight into the threshold-voltage instability effect generally observed, to varying degrees, in SiC MOSFETs, and discusses the need for an improved test method to unambiguously separate out good devices from bad ones. Threshold-voltage stability is affected primarily by active charge traps in the near-interfacial region of the insulating gate oxide. Their close proximity to the semiconductor interface leads to a strong time dependence of the direct-tunneling mechanism in response to changes in gate bias. Bias-temperature stressing can induce additional active oxide traps that can then participate in this instability. This time dependence is not properly accounted for in the existing test methods for assessing high-temperature gate-bias (HTGB) effects.