Fabrication of Hybrid n-ZnMgO/n-ZnO/ p-AlGaN/ p-GaN Light-Emitting Diodes
Fabrication of Hybrid n-ZnMgO/n-ZnO/ p-AlGaN/ p-GaN Light-Emitting Diodes
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DOI：
10.1143/jjap.44.7296
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发表时间：
2005-10
影响因子：
1.5
通讯作者：
Hyucksoo Yang;S. Han;Y. Heo;K. Baik;D. Norton;S. Pearton;F. Ren;A. Osinsky;J. Dong;B. Hertog;A. Dabiran;P. Chow;L. Chernyak;T. Steiner;C. J. Kao;G. Chi
中科院分区：
文献类型：
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作者：
Hyucksoo Yang;S. Han;Y. Heo;K. Baik;D. Norton;S. Pearton;F. Ren;A. Osinsky;J. Dong;B. Hertog;A. Dabiran;P. Chow;L. Chernyak;T. Steiner;C. J. Kao;G. Chi
报道了基于p-n结n-ZnMgO/n-ZnO/p-AlGaN/p-GaN半导体三异质结的紫外光发光二极管(LED)的制备。采用射频等离子体辅助分子束外延技术在p-AlGaN/p-GaN c面蓝宝石模板上生长完全异质结构。横截面透射电子显微镜显示，该器件的假形生长的氧化锌有源区为单晶。LED是通过湿法和干法腐蚀工艺制造的。在370℃下观察到最可能与氧化锌激子跃迁有关的电致发光发射。结果表明，氧化锌基材料作为紫外光发射器的潜在成本更低，发射强度与可比的AlGaN/GaN器件相当或更高。
We report on the fabrication of UV light-emitting diodes (LEDs) based on a p–n junction n-ZnMgO/n-ZnO/ p-AlGaN/ p-GaN semiconductor triple-heterostructure. Radio-frequency plasma-assisted molecular beam epitaxy was used to grow the complete heterostructure on p-AlGaN/ p-GaN c-plane sapphire templates. Cross-sectional transmission electron microscopy showed single-crystal quality of the pseudomorphically grown ZnO active region of the device. The LEDs were fabricated by a process involving both wet and dry etching. Electroluminescence emission most likely associated with ZnO excitonic transition was observed up to 370°C. The results show the potential of ZnO-based materials for UV emitters of potentially lower cost and with comparable or higher emission intensity than comparable AlGaN/GaN devices.