A micro-contact and wear model for chemical-mechanical polishing of silicon wafers
A micro-contact and wear model for chemical-mechanical polishing of silicon wafers
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DOI：
10.1016/s0043-1648(01)00871-7
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发表时间：
2002-02-01
期刊：
影响因子：
5
通讯作者：
Chang, L
中科院分区：
文献类型：
--
作者：
Zhao, YW;Chang, L
提出了一种硅片化学机械抛光（CMP）的微接触磨损模型。该模型建立在弹塑性微接触力学和磨粒磨损理论的基础上。模型中考虑了机械和化学作用的协同效应。推导了CMP工艺中材料去除率与材料、几何参数、化学参数和操作参数的关系式。通过比较理论去除率与实验测定的去除率来评价该模型。良好的协议，获得化学活性和非活性抛光过程。该模型揭示了CMP过程中的微接触和磨损机制的一些见解。研究表明，去除率对浆料中颗粒浓度敏感，对施加载荷和运行速度较为敏感，对表面硬度和浆料粒径最为敏感。该模型可用于研究不同材料、几何形状、浆料化学和操作条件对CMP工艺的影响。(C)2002 Elsevier Science B.V.保留所有权利。
A micro-contact and wear model for chemical-mechanical polishing (CMP) of silicon wafers is presented in this paper. The model is developed on the basis of elastic-plastic micro-contact mechanics and abrasive wear theory. The synergetic effects of mechanical and chemical actions are formulated into the model. A close-form equation of material removal rate from the wafer surface is derived relating to the material, geometric, chemical and operating parameters in a CMP process. The model is evaluated by comparing the theoretical removal rates with those experimentally determined. Good agreement is obtained for both chemically active and inactive polishing processes. The model reveals some insights into the micro-contact and wear mechanisms of the CMP process. It suggests that the removal rate is sensitive to the particle concentration in the slurry, more sensitive to the applied load and operating speed and most sensitive to the surface hardness and slurry particle size. The model may be used to study the effects of different materials, geometry, slurry chemistry and operating conditions on CMP processes. (C) 2002 Elsevier Science B.V. All rights reserved.