Zero-field spin splitting in an inverted In0.53Ga0.47As/In0.52Al0.48As heterostructure: Band nonparabolicity influence and the subband dependence
Zero-field spin splitting in an inverted In0.53Ga0.47As/In0.52Al0.48As heterostructure: Band nonparabolicity influence and the subband dependence
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DOI：
10.1103/physrevb.60.7736
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发表时间：
1999-09
影响因子：
3.7
通讯作者：
Can-Ming Hu;J. Nitta;T. Akazaki;H. Takayanagi;J. Osaka;P. Pfeffer;W. Zawadzki
中科院分区：
文献类型：
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作者：
Can-Ming Hu;J. Nitta;T. Akazaki;H. Takayanagi;J. Osaka;P. Pfeffer;W. Zawadzki
利用磁输运方法研究了In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As量子阱栅控反转结构.通过分析在Shubnikov-de哈斯振荡中观察到的与栅电压相关的拍频模式，我们确定了自旋轨道耦合参数α与栅电压（或电子浓度）的依赖关系。我们的实验数据和分析表明，能带非抛物性效应是不可忽略的。当电子浓度超过2× 10 12 cm− 2时，它会导致α降低25%。我们报告第二子带的α值。
A gated inverted In 0.52 Al 0.48 A s/I n 0.53 Ga 0.47 A s/I n 0.52 Al 0.48 As quantum well is studied via magnetotransport. By analyzing the gate-voltage-dependent beating pattern observed in the Shubnikov–de Haas oscillation, we determine the gate voltage (or electron concentration) dependence of the spin-orbit coupling parameter α. Our experimental data and its analysis show that the band nonparabolicity effect cannot be neglected. For electron concentrations above 2× 10 12 cm− 2, it causes a reduction of α up to 25%. We report the α value for the second subband.