Crystallisation Phenomena of In2O3:H Films
Crystallisation Phenomena of In2O3:H Films
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DOI：
10.3390/ma12020266
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发表时间：
2019-01-02
期刊：
影响因子：
3.4
通讯作者：
Szyszka, Bernd
中科院分区：
文献类型：
--
作者：
Muydinov, Ruslan;Steigert, Alexander;Szyszka, Bernd
对溅射沉积的非晶In₂O₃:H薄膜的结晶情况进行了研究。探讨了沉积和结晶参数对结晶度和电子霍尔迁移率的影响。通过电子能量损失谱在结晶薄膜中发现了金属铟的显著析出。据推测，160℃时金属铟的熔化促进了非晶In₂O₃:H薄膜的初次结晶。羟基的存在被认为是导致伴随晶间In - O - In键合的再结晶和晶粒生长的原因。据推测，金属铟在沉积态的In₂O₃和In₂O₃:H薄膜中提供了过量的自由电子。根据紫外光电子能谱，In₂O₃:H的功函数在结晶过程中从4 eV增加到4.4 eV，这与氧化过程相对应。此外，在红外光谱区域透明度同时增加。与环境空气中的氧气相比，水在超高真空中较高温度下被质疑可氧化金属铟。二次离子质谱结果显示，前一过程主要发生在顶部50 nm范围内。In₂O₃:H的光学带隙在退火过程中增加了约0.2 eV，表明存在掺杂效应。这被认为是一种可能由(In - O)(O)(··)和(OH - )(O)(·)点缺陷共同引起的晶内现象。考虑并通过同时进行的多种非平衡过程解释了迄今为止文献中存在的对In₂O₃:H结晶理解的不一致之处。
The crystallisation of sputter-deposited, amorphous In2O3:H films was investigated. The influence of deposition and crystallisation parameters onto crystallinity and electron hall mobility was explored. Significant precipitation of metallic indium was discovered in the crystallised films by electron energy loss spectroscopy. Melting of metallic indium at 160 degrees C ws suggested to promote primry crystllistion of the morphous In2O3:H films. The presence of hydroxyl ws scribed to be responsible for the recrystlliztion nd grin growth ccompnying the inter-grin In-O-In bounding. Metllic indium ws suggested to provide n excess of free electrons in s-deposited In2O3 nd In2O3:H films. ccording to the ultrviolet photoelectron spectroscopy, the work function of In2O3:H incresed during crystllistion from 4 eV to 4.4 eV, which corresponds to the oxidtion process. Furthermore, trnsprency simultneously incresed in the infrredspectrl region. Wter ws queried to oxidise metllic indium in UHV t higher temperture s compred to oxygen in mbient ir. Secondry ion mss-spectroscopy results reveled tht the former process tkes plce mostly within the top 50 nm. The opticl bnd gp of In2O3:H incresed by bout 0.2 eV during nneling, indicting doping effect. This ws considered s likely intr-grin phenomenon cused by both (In-0)(O)(center dot center dot) nd (OH-)(O)(center dot) point defects. The inconsistencies in understnding of In2O3:H crystllistion, which existed in the literture so fr, were considered nd explined by the multiplicity nd disequilibrium of the processes running simultneously.