Gas sensitivity of ZnO/La2CuO4 heterocontacts
Gas sensitivity of ZnO/La2CuO4 heterocontacts
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ZnO/La2CuO4 异质接触的气体敏感性
DOI：
10.1016/0925-4005(93)00877-2
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
H. Yanagida
中科院分区：
文献类型：
--
作者：
E. Traversa;M. Miyayama;H. Yanagida
本文报道了p型la2cuo4和n型ZnO半导体的异质触点和单一氧化物对CO和h2的敏感性。异质触点是通过机械压制烧结的两种氧化物球团来制备的。在温度为25 ~ 400°C的空气中测量的异质触点的电流-电压（I-V）特性显示出典型的p-n二极管行为，而单一氧化物的I-V曲线是线性的，显示出欧姆行为。电流的增加与CO和h2浓度的变化相对应，这与异接触的偏置有关。在还原性气体存在下，它们的i - v曲线继续表现出整流特性。单一氧化物表现出很小的气敏性和较慢的响应时间。异质触点对CO没有选择性，但对气体的敏感性高于CuO/ZnO触点。在400°C时观察到最高的灵敏度。对h2o2的响应时间非常快（不到1分钟），而对CO的响应时间要慢得多。
The sensitivity to CO and H2of heterocontacts between p-type La2CuO4and n-type ZnO semiconductors, and of the single oxides, as a comparison, is reported. Heterocontacts are prepared by mechanically pressing sintered pellets of the two oxides. Current—vontage (I-V) characteristics for the heterocontacts, measured in air at temperatures ranging from 25 to 400 °C, show typical p-n diode behaviour, whileI-Vcurves for the single oxides are linear, showing ohmic behaviour. An increase in current, which is bias dependent for the heterocontacts, is observed in correspondence to variations of CO and H2concentrations. TheI-Vcurves in the presence of reducing gases continue to show rectifying characteristics. The single oxides show little gas sensitivity and slow response times. Heterocontacts show no selectivity to CO, but higher sensitivity to gases than do CuO/ZnO contacts. The highest sensitivities are observed at 400 °C. The response time to H2is very fast (less than 1 min), while the response time to CO is much slower.